[16a-503-1~12] 15.4 III-V-group nitride crystals

[16a-503-1] Photoluminescence characterization of ion-implanted and epitaxial Mg-doped GaN on a GaN substrate (2)

〇Shigefusa Chichibu^1,2, Kazunobu Kojima¹, Shin-ya Takashima³, Masaharu Edo³, Katsunori Ueno³, Shimizu Mitsu⁴, T Takahashi⁴, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM, Tohoku Univ., 2.IMaSS, Nagoya Univ., 3.Fuji Electric, 4.AIST, 5.Univ. of Tsukuba)

Keywords:GaN, Mg-doped p-type GaN, Nonradiative recombination center

We will present the luminescent properties of ion-implanted (I/I) and epitaxial Mg-doped GaN grown on a freestanding GaN substrate.