[16a-503-1~12] 15.4 III-V-group nitride crystals

[16a-503-11] Clean hydrogen evolution by using InGaN photocatalyst without external bias

〇Kazuhiro Ohkawa¹, Daisuke Iida², Takamitsu Shimizu², Patrick Ginet³ (1.KAUST, 2.Tokyo Univ. Science, 3.Air Liquide Laboratories)

Keywords:nitride photocatalyst, hydrogen, nitride semiconductor

We have succeeded to improve Nitride photocatalyst invented in 2001. Hydrogen evolution was observed by introducing p-surface layer even at zero biased, although it is difficult to get large photocurrent in case of an InGaN photo-absorption layer. Energy conversion efficiency from light energy to hydrogen energy was over 2%.