[16a-503-1~12] 15.4 III-V-group nitride crystals

[16a-503-2] Cathodoluminescence observation of subsurface region of GaN materials

〇Takashi Sekiguchi¹, Takashi Kimura¹, Luo Xianjia¹, Masaharu Edo², Shinya Takashima² (1.NIMS, 2.Fuji Electric Ltd.)

Keywords:GaN, cathodoluminescence, ion implantation

We propose cross-sectional cathodoluminescence study using oblique polishing method. We applied this technique for the characterization of Mg implantation in GaN epitaxial wafers. The Mg related emission was maximum at 200 nm from the surface. The density of nonradiative centers and activation rate of Mg were estimated from the variation of CL spectra.