The 64th JSAP Spring Meeting, 2017

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-503-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 16, 2017 9:00 AM - 12:15 PM 503 (503)

Yoshio Honda(Nagoya Univ.), Ryota Ishii(Kyoto Univ.)

9:30 AM - 9:45 AM

[16a-503-3] Fabrication of red LED with Eu-doped GaN active layer using rf-plasma-assisted molecular beam epitaxy method

〇Kensuke Tomoyasu1, Sekiguchi Hiroto1, Tateishi Hiroki1, Yamane Keisuke1, Okada Hiroshi2,1, Wakahara Akihiro1,2 (1.Toyohashi Univ., 2.EIIRIS)

Keywords:GaN, Eu, LED