The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

3 Optics and Photonics » 3.11 Photonic structures and phenomena

[16a-F202-1~14] 3.11 Photonic structures and phenomena

3.11と13.7,3.11と3.12のコードシェアセッションあり

Thu. Mar 16, 2017 9:00 AM - 12:30 PM F202 (F202)

Takashi Asano(Kyoto Univ.), Akihiko Shinya(NTT)

10:45 AM - 11:00 AM

[16a-F202-8] H1 photonic crystal nanocavity with an ultrahigh Q/V value

Eiichi Kuramochi1,2, Jun-Ki Kim2, Hideaki Taniyama1,2, Akihiko Shinya1,2, Shota Kita2, Masaya Notomi1,2 (1.NTT-NPC, 2.NTT-BRL)

Keywords:photonic crystal, optical cavity, silicon photonics

In this study, we explored a cavity design that can concentrate the electric field to one electric field antinode filling out a small slot. The H1 nanocavity is known to have a monopole mode with an antinode just on the center point defect. Here, we report on utilizing an H1 nanocavity with a narrow slot placed just at the center. We revealed that this design can focus the electronic field of the monopole-mode to an antinode sharing the short sub-wavelength air-slot. By employing the multi-hole-shifting, we can enhance Q factor to ~106 with keeping mode volume (V) around 0.02 (λ/n)3 according to the FDTD simulation. We fabricated the Si H1 slot nanocavities using electron beam lithography as the design optimized by the simulation. The Q of the cavity modes was strongly dependent on the slot dimension that was also found in the simulation. No high-Q mode was found without the slot. By setting the slot size appropriately, we obtained loaded Q of the monopole mode higher than 2×105 which is the highest Q factor in all slotted nanocavities. Assuming a theoretical value of V~0.02 (λ/n)3 obtained using FDTD, the Q/V was found to be over 1.0×107, which is the highest value reported for 2D PhC cavities.