[16a-F203-1~11] 17.3 Layered materials

[16a-F203-1] Construction of atomically thin semiconductor/correlated oxide heterostructures

〇Mahito Yamamoto¹, Teruo Kanki¹, Azusa N. Hattori¹, Ryo Nouchi², Keiji Ueno³, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Osaka Pref. Univ., 3.Saitama Univ.)

Keywords:atomically thin semiconductors, correlated oxides

We investigate the transport properties of heterojunctions based on atomically thin MoS₂ or WSe₂ and VO₂ that shows metal-insulator transition at T_c ~ 340 K. We observe a rectifying behavior in the VO₂-WSe₂ junction above T_c, while the VO₂-MoS₂ junction shows an Ohmic-like behavior both below and above T_c. The observations may have implications for electronic applications of heterostructures based on correlated materials and atomically thin semiconductors.