[16a-F203-1~11] 17.3 Layered materials

[16a-F203-3] Device Simulation of Tunneling Transistor formed by HfS₂

〇Toru Kanazawa¹, Tomohiro Amemiya¹, Seiko Netsu¹, Vikrant Upadhyaya¹, Koichi Fukuda^2,1, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.AIST)

Keywords:Transition metal dichalcogenides, Tunneling Transistor, TCAD simulation

HfS₂, which is one of the transition metal dichalcogenides, can form a type-II heterojunction with several other TMDCs with a small band overlap at the interface. These structures are suitable for the high current operation of TMDC based TFET. In this report, we have investigated the current properties of TFET using TMDC based heterojunction. The simulation results indicate that WS₂/HfS₂ heterostructure is expected to achieve high on current with a steep subthreshold slope.