[16a-F203-1~11] 17.3 Layered materials

△ [16a-F203-4] Type II HfS₂/MoS₂ heterojunction TFET

〇(M2)Seiko Netsu¹, Toru Kanazawa¹, Vikrant Upadhyaya¹, Teerayut Uwanno², Tomohiro Amemiya¹, Kosuke Nagashio², Yasuyuki Miyamoto¹ (1.Tokyo Inst., 2.UTokyo)

Keywords:TFET, HfS2, MoS2

Transition metal dichalcogenide (TMD) monolayers are atomically thin materials which has a band gap and expected to be applied to Field Effect Transistor (FET). Our research grope has reported Few-layer HfS₂ transistors so far. HfS₂ can be applied to Tunnel FET (TFET) together with others TMD materials due to the fact that its higher electron affinity causes large band discontinuity, resulting in higher on-current at low voltage. In this report, we will present the first operation of HfS₂/MoS₂ TFET.