[16a-F203-1~11] 17.3 Layered materials

[16a-F203-6] Barrier thickness dependence of current in sputtering MoS₂ film with tunnel contacts

〇Naoki Hayakawa¹, Iriya Muneta¹, Takumi Ohashi¹, Kentarou Matsuura¹, Junichi Shimizu¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi wakabayashi¹ (1.Tokyo Tech.)

Keywords:transition metal dichalcogenide, spintronics