[16a-F204-1~11] 3.15 Silicon photonics

[16a-F204-1] Enhanced photoluminescence from n⁺-Ge by post-growth annealing (2)

〇Naoki Higashitarumizu¹, Naoyuki Kawai¹, Yasuhiko Ishikawa¹ (1.Univ. of Tokyo)

Keywords:germanium, photoluminescence

Effects of post-growth cyclic annealing was studied on photoluminescence from n-type Ge-on-Si (n=1.0x10¹⁹ cm^-2). In order to prevent dopant loss due to phosphorus out-diffusion during the annealing, Si capping layer was grown on Ge. Non-radiative recombination (NRR) was reduced owing to the reduction of threading dislocation density (TDD). As well as TDD, Si/Ge intermixing will be also discussed in terms of NRR at the Si/Ge interface.