[16a-F204-1~11] 3.15 Silicon photonics

[16a-F204-11] Development of high-performance surface-type Ge photodiode on 300mm-diameter of SOI substrate for Si photonics integrated receiver circuit

〇Junichi Fujikata¹, Keizo Kinoshita¹, Tsuyoshi Horikawa^1,2, Koichi Takemura¹, Daisuke Okamoto¹, Shigeki Takahashi¹, Masahiko Imai¹, Masataka Noguchi¹, Yasuyuki Suzuki¹, Mitsuru Kurihara¹, Takahiro Nakamura¹, Kazuhiko Kurata¹, Tohru Mogami¹ (1.PETRA, 2.AIST)

Keywords:Si photonics, Ge photodiode

High-performance surface-type Ge photodiode was developed on 300mm-diameter of SOI substrate for Si photonics integrated receiver circuit. Very low dark current of 60 nA at 3.3 Vdc and high-responsivity of more than 80 % Q. E. with high-bandwidth of 11-12 GHz was achieved uniformly on the wafer.