[16a-F204-1~11] 3.15 Silicon photonics

[16a-F204-9] Reduction of Dark Current for Waveguide Germanium Photodetector with Lateral PIN Structure

〇Hideki Ono¹, Hiroki Yaegashi¹, Hironori Sasaki¹ (1.PETRA)

Keywords:Silicon Photonics, Germanium Photodetector, Lateral PIN Structure

In order to reduce the dark current of the evanescent coupled waveguide type Ge-PD with a lateral PIN structure, ions were implanted into the surface of the Ge layer serving as a light absorption region. As a result, the reverse leakage current was reduced by about one order of magnitude compared to the conventional lateral PIN structure which does not implant ions on the Ge layer surface. This is because reverse bias is applied only to a part of the surface of the Ge layer by ion implantation to a part of the surface of the Ge layer with many crystal defects, so reverse leakage current hardly flows on the Ge layer surface.