[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

△ [16a-P4-10] Effects of GaN-cap on C-V characteristics of AlGaN/GaN MOS structures

〇Kenya Nishiguchi¹, Syouta Kaneki¹, Tamotsu Hashizume¹ (1.RCIQE)

Keywords:GaN, GaN-cap