[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-2] DLTS studies of traps in MOCVDp⁺⁺p^-n⁺GaN on GaN substrate

〇(B)Tatsuya Kogiso¹, Shougo Ueda¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs.,Inc., 3.Nagoya University)

Keywords:p-GaN, DLTS

We have studied traps in p-GaN using the p⁺⁺p^-n⁺ junction grown by MOCVD on n⁺-GaN substrate with DLTS measurements. Four hole traps labelled H_a, H_b, H_c and H_d are observed in MOCVD p-GaN. However, to determine trap parameters H_a and H_b whose peaks are below 170 K, low-frequency capacitance DLTS must be employed due to freeze-out of Mg acceptors. The energy levels of trap H_c and H_d are E_v+0.46 and 0.88 eV, respectively with the trap concentration of 1.6x10¹⁵ and 2.4x10¹⁶ cm^-3. The energy level of H_d is close to that of H1 observed in MOCVD n-GaN.