[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-4] C-V profile analysis of plasma-induced defects in GaN (2)

〇Ryouhei Inoue¹, Yusaku Wakasugi¹, Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

Keywords:GaN, plasma-induced defects