9:30 AM - 11:30 AM
[16a-P4-6] Mapping of degradation of AlGaN/GaN MIS-HEMTs using scanning internal photoemission microscopy
Keywords:AlGaN/GaN MIS-HEMT, SIPM, Schottky contact
We have applied SIPM to characterize degradation of AlGaN/GaN MIS-HEMT. After applying a voltage stress of 20 V, we found degraded spots at the edge of the gate electrode on the drain side in the SIPM image.