Growth and device application of GaAsPN alloys on Si with lattice-matching conditions

Akihiro Wakahara; Keisuke Yamane; Kento Sato; Masaya Goto; Kenjiro Takahashi; Hiroto Sekiguchi; Hiroshi Okada

Presentation information

Symposium (Oral)

Symposium » Photovoltaic 4.0 - Next-generation renewable energy systems powered by high-efficiency, low-cost photovoltaics -

[16p-304-1~13] Photovoltaic 4.0 - Next-generation renewable energy systems powered by high-efficiency, low-cost photovoltaics -

Thu. Mar 16, 2017 1:00 PM - 6:00 PM 304 (304)

Syuhei Yagi(Saitama Univ.), Masakazu Sugiyama(Univ. of Tokyo), Kentaroh Watanabe(Univ. of Tokyo)

1:45 PM - 2:15 PM

▲ [16p-304-3] Growth and device application of GaAsPN alloys on Si with lattice-matching conditions

〇Akihiro Wakahara¹, Keisuke Yamane¹, Kento Sato¹, Masaya Goto¹, Kenjiro Takahashi¹, Hiroto Sekiguchi¹, Hiroshi Okada² (1.Toyohashi Tech., 2.Toyohashi Tech. EIIRIS.)

Keywords:heteroepitaxy on Si, Dilute Nitride alloy, multi-junction solar cell

GaAsPN quaternary alloy has expected to be a material for Si substrate, since they can control the band gap in a wide range while lattice matching with Si. However, it is difficult to obtain high quality epitaxial layer with high nitrogen contents which is necessary for achieving suitable bang-gap for a tandem-cell based on Si bottom cell.
In this presentation, we summarize the key technology for improving the quality of GaAsPN heteroepitaxial layer, and report latest results of the GaAsPN pin diode on Si substrate fabricated by combining the dislocation free GaP / Si heteroepitaxy technology.