2017年第64回応用物理学会春季学術講演会

講演情報

シンポジウム(口頭講演)

シンポジウム » GFIS(電界電離ガスイオン源)ガスイオン顕微鏡技術とその材料・デバイス研究開発への応用:現状と今後の展望

[16p-315-1~11] GFIS(電界電離ガスイオン源)ガスイオン顕微鏡技術とその材料・デバイス研究開発への応用:現状と今後の展望

2017年3月16日(木) 13:15 〜 18:00 315 (315)

水田 博(北陸先端大)、小川 真一(産総研)

13:30 〜 14:00

[16p-315-2] The History and New Development of the Helium Ion Microscopy Technology with ZEISS ORION NanoFab

Zhou Yongkai1 (1.Carl Zeiss Microscopy GmbH)

キーワード:GFIS, HIM, Orion

This talk introduces the history and fundamentals of the Helium Ion Microscopy (HIM) technology. HIM is based on the Gas Field Ion Source (GFIS) technology, which creates an extremely collimated, highly coherent ion beam that can be used for highest resolution imaging with probe sizes of less than 0.5nm and for precise nanofabrication down to a dimension of about 5nm. HIM can achieve better than FESEM imaging resolution and smaller than Ga FIB patterning dimension.

On top of the basic HIM technology, the latest Orion NanoFab machine integrates Ne and Ga ions in the system to meet the shifted requirement from an imaging tool to a NanoFabrication tool in recent years. The Ga FIB allows removing massive material at a higher speed. Neon and helium GFIS beams are used to create sub-10 nanometer structures that demand extremely high machining fidelity. The Zeiss ORION NanoFab is the only commercially available system in the world that covers the complete range of micromachining to nano machining applications using gallium, neon and helium ion beams integrated into a single instrument.

Finally, the latest applications that are becoming available on Orion Nanofab will be updated, which includes FIB-HIM 3D Nanotomography, In-situ lift-out TEM lamella preparation, Secondary Ion Mass Spectrometry (SIMS) analysis, and ZEN Automation Software.