[16p-412-1~20] 13.5 Semiconductor devices and related technologies

[16p-412-10] Formation of p⁺/n Ge junction with steep impurity profile by snowplow effect of NiGe

〇Ryo Matsumura^1,2, Takumi Katoh¹, Ryotaro Takaguchi¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo, 2.JSPS Research Fellow)

Keywords:pn junction

In order to increase performance of Ge TFETs, ultra-shallow source-channel junction is essential.
Here, in this work, we focused on snowplow effect of NiGe, combined with low energy implantation of BF2 ions, and realized ultra-shallow p+/n junction (~5 nm/dec).