[16p-412-1~20] 13.5 Semiconductor devices and related technologies

[16p-412-2] TCAD Simulation of C-TFET Ring Oscillator with Drain Offset Structure

〇Hidehiro Asai¹, Takahiro Mori¹, Junichi Hattori¹, Takashi Matsukawa¹, Kouich Fukuda¹ (1.AIST)

Keywords:Tunnel FET, Ring oscillator, Drain offset structure

In this study, we perform TCAD simulation for C-TFET ring oscillators with "drain offset structures". Firstly, we find that the off state current is strongly suppressed by the drain offset structure. We calculate output waveforms from the ring oscillators composed of the TFETs, and find that an output frequency is increased by the drain offset structure. The increase of the output frequency is related to the unique characteristics of parasitic capacitances, and depends on operating voltage and gate length.