Improvement of On-state Current by Modified Doping Profile in GaAsSb/InGaAs Double-Gate Tunnel FET.

shinjiro iwata; nobukazu kise; ryosuke aonuma; yasuyuki miyamoto

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[16p-412-1~20] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 1:15 PM - 6:30 PM 412 (412)

Keiji Ikeda(TOSHIBA), Masaharu Kobayashi(Univ. of Tokyo)

2:15 PM - 2:30 PM

[16p-412-5] Improvement of On-state Current by Modified Doping Profile in GaAsSb/InGaAs Double-Gate Tunnel FET.

〇shinjiro iwata¹, nobukazu kise¹, ryosuke aonuma¹, yasuyuki miyamoto¹ (1.Tokyo Tech.)

Keywords:tunnel FET, InGaAs, GaAsSb

Tunnel FETs are attractive candidate for next generation low power devices. However, there is a problem that on-current is so small due to high tunnel resistance. In this work, it was confirmed that in GaAsSb/InGaAs double-gate Tunnel FET, it is possible to improve on-current while maintaining off-current by modified doping profile of t source and drain regions.