[16p-413-1~11] 13.3 Insulator technology

[16p-413-10] Pre-treatment Effects on Al₂O₃/In_xGa_1-xAs MOS Interface Properties and their Physics Model

〇Chiaki Yokoyama¹, Chih-Yu Chang², Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, Faculty of Eng., 2.The Univ. of Tokyo, School of Eng.)

Keywords:InGaAs, MOS interface, Oxide

In the previous study, in higer In content, it is found that InGaAs MOS interfaces with BHF cleaning exhibit lower D_it than with (NH₄)S_x cleaning. In this study, we performed HF cleaning, and proved that in BHF cleaning, HF-based species play a more essential role in the improvement in the interface properties than NH₃-based species. It was suggested through XPS that As₂O₃ works as passivation for InGaAs MOS interface defects, and we proposed a physical model of relationship between pretreatment and possible defects responsible for D_it.