The 64th JSAP Spring Meeting, 2017

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Symposium (Oral)

Symposium » Process technology for advanced power semiconductor devices

[16p-502-1~10] Process technology for advanced power semiconductor devices

Thu. Mar 16, 2017 1:45 PM - 6:30 PM 502 (502)

Mutsuko Hatano(Titech), Masahiro Ishida(Panasonic), Katsuhiko Nishiwaki(Toyota)

1:45 PM - 2:15 PM

[16p-502-1] Latest Si Power Device Process Technologies

〇Noriyuki Iwamuro1 (1.Univ. Tsukuba)

Keywords:Power semiconductor devices, Wafer process technologies, Assembly technologies

Watching a trend of paper presentation in one of the most prestigious international conference of power semiconductor devices "ISPSD", there are still a lot of papers related to Si power MOSFET and IGBT, although SiC and GaN related papers are outstanding. In this paper, author will comment on a latest Si power device process technology to support a recent remarkable progress of Si-IGBT.