The 64th JSAP Spring Meeting, 2017

Presentation information

Symposium (Oral)

Symposium » Process technology for advanced power semiconductor devices

[16p-502-1~10] Process technology for advanced power semiconductor devices

Thu. Mar 16, 2017 1:45 PM - 6:30 PM 502 (502)

Mutsuko Hatano(Titech), Masahiro Ishida(Panasonic), Katsuhiko Nishiwaki(Toyota)

3:30 PM - 3:45 PM

[16p-502-5] Thermally Stable SiC Schottky Barrier Diodes Utilizing Laminated W/C Electrodes

〇(M2)Tomoyuki Suzuki1, Hitoshi Wakabayashi1, Kazuo Tsutsui1, Hiroshi Iwai1, Kuniyuki Kakushima1 (1.Tokyo Tech)

Keywords:silicon carbide, tungsten carbide, Schottky barrier diode