[16p-503-1~15] 15.4 III-V-group nitride crystals

[16p-503-14] Study on electrical properties characterization of InN epilayer using THz ellipsometry

〇(B)Kenta Morino¹, Kouhei Tachi¹, Takashi Fujii^1,3, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹, Takeshi Nagashima², Toshiyuki Iwamoto³, Yukinori Sato³ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP.)

Keywords:THz Ellipsometry, InN, THz Time-Domain Spectroscopy

We have measured the electrical characteristics of InN thin film by THz-TDSE and compared with the result of Hall effect measurement. The free carrier density, mobility and DC resistivity obtained by THz-TDSE analysis are 1.2×10¹⁸cm^-3, 1310cm²/Vs, and 3.8×10^-3Ωcm. On the other hand, the results obtained by the Hall effect measurement are 2.2×10¹⁸cm^-3, 980cm²/Vs, and 2.9×10^-3Ωcm.