[16p-503-1~15] 15.4 III-V-group nitride crystals

[16p-503-2] Effect of ammonia gas introduction on the shape of InGaN / GaN nanostructures fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇(B)Akihiro Matsuoka¹, Tomoya Mizutani¹, Shun Ishijima¹, Kohei Ogawa¹, Yusuke Namae¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:semiconductor, nanostructure, GaN

We have researched hydrogen environment anisotropic thermal etching (HEATE), which is a new low damage GaN etching technology utilizing thermal decomposition reaction of GaN in a low pressure hydrogen atmosphere and reported the characterization of etching of GaN in HEATE. In this study, we report on the etching characterization of InGaN / GaN nanostructures fabricated by HEATE using mixed gas of hydrogen and ammonia.