[16p-512-1~10] Imaging of interfaces in thin films and multilayers

[16p-512-8] Observation of strain field in Al ion-implanted silicon carbide crystals by angle-resolved X-ray topography and local rocking curve imaging- X-ray penetration-depth dependence-

〇Yumiko Takahashi¹, Keiichi Hirano¹, Takayoshi Shimura², Shinji Nagamachi³ (1.KEK-PF, 2.Osaka Univ, 3.Nagamachi Science Laboratory Co., Ltd.)

Keywords:topography, rocking curve, SiC

Grazing incidence synchrotron X-ray topography has been used to observe ion-implanted 4H-SiC epitaxial wafers. This time, we will report the strain distribution observed by angle-resolved X-ray topography and local rocking curve imaging method. A minute difference in tilt angle of SiC wafers was discriminated by this method.