The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16p-B5-1~15] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Mar 16, 2017 1:45 PM - 5:45 PM B5 (B5)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

4:15 PM - 4:30 PM

[16p-B5-10] Exploratory study on the substitutional elements of Mg2Si so as to evoke negative chemical pressure

Yoji Imai1, Atsushi Yamamoto1, Tsutomu Iida2, Ken-ichi Takarabe3 (1.AIST, 2.Tokyo Univ. Sci., 3.Okayama Univ. Sci.)

Keywords:Mg2Si, chemical pressure

Mg2Si is attracting attention as one of the eco-friendly thermoelectric semiconductors. Its Seebeck coefficient is expected to be increased by 30-40% when negative pressure is applied under the n-type conduction. We confirmed whether or not the negative pressure can be chemically applied by alloying making use of the 1st-principle calculations.