[16p-B5-1~15] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-B5-13] Linear Regression Analysis of Dielectric Constants of Tetrahedral Semiconductors

Mikihiro Arima¹, Masaya Fuchi¹, 〇Yoshihito Maeda¹ (1.Kyutech)

Keywords:Materials Informatics, Tetrahedral Semiconductors, Dielectric constant

This study concerns Materials Informatics, where a given material property can be analyzed by mathematical statstic methods. In this study , we have investigated dielectric constants of semiconductors with tetrahedral structures by using the Generalized Linear Regression method (GLM) and decriptors such as the nuclei spacing, the covalent energy, the metallic energy, the covalency, the metallicity which were employed in the Linear Combination with Atomic Orbitals (LCAO). The suitable llinear regression model can be obtained by the AIC evaluation.