[16p-B5-1~15] 13.2 Exploratory Materials, Physical Properties, Devices

△ [16p-B5-15] Novel Transparent Bipolar Oxide Semiconductor: ZrOS

〇Takeshi Arai¹, Soshi Iimura¹, Junghwan Kim², Hideo Hosono^1,2 (1.MSL, TIT, 2.MCES, TIT)

Keywords:Oxide semiconductor, Bipolar, Material design

Visible-light-transparent bipolar oxide semiconductors have been attractive due to their potential application in "transparent electronics". Here, we present the synthesis and physical properties of tetragonal-zirconium oxysulfide (t-ZrOS) with a wide optical forbidden band gap. Fluorine and yettorium doping markedly enhaced the conductivity up to ~10^-2 Scm^-1, in which a clear sign change of Seebeck coefficient was observed. UPS measurement revealed that the VBM and CBM were located at -5.6 and 4.0eV, respectively, indicating that the band alignment of t-ZrOS is suitable for the bipolar semiconductor.