[16p-B6-1~16] 17.2 Graphene

[16p-B6-7] Growth of Quasi-Free-Standing Graphene on a SiC Terrace

Vincent Vinel¹, 〇Yoshiaki Sekine¹, Hiroki Hibino^1,2, Kazuhide Kumakura¹ (1.NTT Basic Research Labs., 2.Kwansei Gakuin Univ.)

Keywords:graphene, hydrogen intercalation, SiC terrace

Surface steps degrade transport properties of graphene grown on a SiC substrate. Quasi-free-standing graphene on a several-µm-wide SiC terrace was grown by Si-sublimation technique and hydrogen intercalation. The grown sample is in the large terrace, which was investigated by Nomarski differential interference microscopy, atomic force microscopy, and Raman scattering spectroscopy.