[16p-E204-1~8] 2.2 Detection systems

[16p-E204-6] Development of large area CdTe pixel detector based on multi-ASIC bonding technology

〇Hidenori Toyokawa¹, Morihiro Kawase¹, Shukui Wu¹, Yukito Furukawa¹, Choji Saji¹, Kentaro Kajiwara¹, Masugu Sato¹, Toko Hirono², Takahisa Shobu³, Ayumi Shiro⁴, Atsushi Suenaga⁵, Hirokazu Ikeda⁶ (1.JASRI, 2.Univ. of Bonn, 3.JAEA, 4.QST, 5.Howa Sangyo Co., Ltd., 6.ISAS/JAXA)

Keywords:CdTe, pixel detector, photon counting

We have been developing CdTe pixel detectors with photon-counting ASICs. This study describes a multi-chip detector combined with an aluminum Schottky diode sensor and 2 by 2 of SP8-04F10K ASICs. As an application, a feasibility study for visualization of grain boundaries with white X-ray micro beam diffraction will be reported.