[16p-E204-1~8] 2.2 Detection systems

[16p-E204-7] Development of a SOI-PPD for Photon Counting CT

〇(D)Akihiro Koyama¹, Kenji Shimazoe¹, Hiroyuki Takahashi¹, Ryutaro Hamasaki², Tohru Takeshita³, Shunji Kishimoto⁴, Ikuo Kurachi⁴, Isamu Nakamura⁴, Toshinobu Miyoshi⁴, Yasuo Arai⁴ (1.Univ. of Tokyo, 2.Sokendai, 3.Shinshu Univ., 4.KEK)

Keywords:Avalanche photo diode, Photon counting computed tomography, Silicon on insulator

Photon counting computed tomography (PCCT), which can discriminate each incident X-ray’s energy, becomes more and more important technique to satisfy high signal to noise ratio and dose reduction requirements in X-ray imaging. In particular, PCCT developments with indirect conversion method using scintillation detector took great interests for its low cost and good detection efficiency derived from high-density material availability.
Since high sensitive separately readable photo detector needs to be coupled to pixelated scintillator for precise energy measurement, we fabricated test element group including Geiger avalanche photo diode and inspected basic properties.