Improvement of device characteristic for Hf-based MONOS structure by Si(100) surface flattening

Sohya Kudoh; Masahiro Tsukazaki; Shun-ichiro Ohmi

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

2:45 PM - 3:00 PM

△ [16p-E206-5] Improvement of device characteristic for Hf-based MONOS structure by Si(100) surface flattening

〇(DC)Sohya Kudoh¹, Masahiro Tsukazaki¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:surface flattening process, silicon, non-volatile memory

The effect of Si(100) surface flattening by annealing at 1050 °C in Ar/4%H₂ ambient on device characteristics was investigated in previous report. In this study, the condition of annealing for surface flattening process was investigated. Furthermore, ONO structure was deposited on atomically flat Si(100) surface to investigate the effect of Si surface flattening process on electrical characteristics of Hf-based MONOS structure.