[16p-F203-1~15] 17.3 Layered materials

[16p-F203-14] Current jump and memory effect in field effect transistor using atomic layer materials observed at high temperature operation

Tomoki Yamanaka¹, Ayaka Higuchi¹, Masahiro Matsunaga¹, Kota Kamiya¹, Guanchen He², Jonathan P. Bird^1,2, 〇Nobuyuki Aoki¹ (1.Chiba Univ., 2.SUNY Buffalo)

Keywords:atomic layer materials, field effect transistor, monory effect

Recently, we observed a remarkable current jump in a transmission curve of FET structure composed of monolayer MoS₂ single crystal at high temperature. We will introduce the phenomena and discuss the mechanisms compering with results observed in the other layered materials.