[16p-F203-1~15] 17.3 Layered materials

△ [16p-F203-8] MBE growth of GaSe thin films on Ge(111) substrates

〇Takahiro Yonezawa¹, Tatsuya Murakami¹, Koichi Higashimine¹, Antoine Fleurence¹, Yoshifumi Oshima¹, Yukiko Yamada-Takamura¹ (1.JAIST)

Keywords:chalcogenide, two-dimensional materials, van der Waals epitaxy

GaSe thin films were grown on Ge(111) wafers using molecular beam epitaxy method, and single-crystalline epitaxial film growth were confirmed. Although chalcogenides are known to grow on single crystal substrates via "van der Waals" epitaxy, cross-sectional scanning transmission electron microscopy revealed metastable phases of GaSe at the film-substrate interface. The result implies the importance of substrate effect on the structure of epitaxial two-dimensional materials.