10-Gb/s intensity modulation with III-V/Si MOS capacitor Mach-Zehnder modulator

Tatsuro Hiraki; Takuma Aihara; Koichi Hasebe; Takuro Fujii; Koji Takeda; Takaaki Kakitsuka; Tai Tsuchizawa; Hiroshi Fukuda; Shinji Matsuo

Presentation information

Oral presentation

CS Code-sharing session » CS.1 3.13/3.15 Code-sharing Session

[16p-F204-1~15] CS.1 3.13/3.15 Code-sharing Session

Thu. Mar 16, 2017 1:45 PM - 6:45 PM F204 (F204)

Makoto Okano(AIST), Mitsuru Takenaka(Univ. of Tokyo), Yasuhiko Ishikawa(Univ. of Tokyo)

5:30 PM - 5:45 PM

[16p-F204-11] 10-Gb/s intensity modulation with III-V/Si MOS capacitor Mach-Zehnder modulator

〇Tatsuro Hiraki^1,2, Takuma Aihara¹, Koichi Hasebe¹, Takuro Fujii^1,2, Koji Takeda^1,2, Takaaki Kakitsuka^1,2, Tai Tsuchizawa^1,2, Hiroshi Fukuda^1,2, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.NTT Nanophotonics Center)

Keywords:Silicon photonics, Optical modulator

We fabricated Mach-Zehnder modulator with III-V/Si MOS-capacitor phase shifters, comprised of n-type InP and p-type Si. We demonstrated 10-Gb/s intensity modulation with pre-emphasis signal input.