Lasing characteristics of 1.5µm GaInAsP double-hetero laser diode on wafer bonded InP/Si substrate

Naoki Kamada; Tetsuo Nishiyama; Yuya Onuki; Xu Han; Gandhi Kallarasan Periyanayagam; Masaki Aikawa; Kazuki Uchida; Hirokazu Sugiyama; Natsuki Hayasaka; Kazuhiko Shimomura

Presentation information

Oral presentation

CS Code-sharing session » CS.1 3.13/3.15 Code-sharing Session

[16p-F204-1~15] CS.1 3.13/3.15 Code-sharing Session

Thu. Mar 16, 2017 1:45 PM - 6:45 PM F204 (F204)

Makoto Okano(AIST), Mitsuru Takenaka(Univ. of Tokyo), Yasuhiko Ishikawa(Univ. of Tokyo)

2:45 PM - 3:00 PM

[16p-F204-3] Lasing characteristics of 1.5µm GaInAsP double-hetero laser diode on wafer bonded InP/Si substrate

〇Naoki Kamada¹, Tetsuo Nishiyama¹, Yuya Onuki¹, Xu Han¹, Gandhi Kallarasan Periyanayagam¹, Masaki Aikawa¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:InP/Si, laser diode, direct bonding

« Previous in this session
Next in this session »

▲