1:30 PM - 3:30 PM
[16p-P8-15] Nano-scale Observation on Initial Stage of Nitride Growth on β-Ga2O3 (-201) Surface
Keywords:Gallium oxide, scanning tunneling microscopy, surface nitridation
Ga2O3 is a wide-gap semiconductor material. Its bottom of the conduction
band is close to that of GaN. Concerning structure, the atomic
arrangement of oxygen is hexagonal-like in β-Ga2O3(-201) plane, which is
similar to GaN(0001) atomic arrangements of Ga and N. Moreover, lattice
constant of the oxygen arrangement is close to that of GaN(0001).
Therefore flat film with a good quality of GaN is predicted to grow.
However, the detailed mechanism including buffer layer formation is not
clarified. In this study, we investigate surface nitridation and its
effect on GaN morphology using scanning tunneling microscopy. On the
nitrideized surface, we could observe flat terraces and atomic rows of
gallium atoms, whereas it was difficult to recognize the nitride structure.
band is close to that of GaN. Concerning structure, the atomic
arrangement of oxygen is hexagonal-like in β-Ga2O3(-201) plane, which is
similar to GaN(0001) atomic arrangements of Ga and N. Moreover, lattice
constant of the oxygen arrangement is close to that of GaN(0001).
Therefore flat film with a good quality of GaN is predicted to grow.
However, the detailed mechanism including buffer layer formation is not
clarified. In this study, we investigate surface nitridation and its
effect on GaN morphology using scanning tunneling microscopy. On the
nitrideized surface, we could observe flat terraces and atomic rows of
gallium atoms, whereas it was difficult to recognize the nitride structure.