[16p-P8-1~23] 21.1 Joint Session K

[16p-P8-16] Electrical Characterization of β-Ga₂O₃ single crystal substrate

〇Yoshitaka Nakano¹ (1.Chubu Univ.)

Keywords:b-Ga2O3, deep-level defects, steady-state photo-capacitance spectroscopy

We have electrically investigated deep-level defects in unintentionally-doped β-Ga₂O₃ single crystal substrate, employing a steady-state photo-capacitance spectroscopy technique. Some kinds of deep-level defects were found to be located at 2.08, 2.71, and 3.90eV below the conduction band and at 3.76eV above the valence band, in addition to the near-band edge of 4.49eV.