[16p-P8-1~23] 21.1 Joint Session K

[16p-P8-2] Monolayer growth control of ZnO thin films by a pulse gas supply

〇Shotaro Ono¹, Taro Saito¹, Kanji Yasuo¹ (1.Nagaoka Univ.)

Keywords:catalytic reaction, ZnO, pulse gas supply

One monolayer growth control of c-ZnO films was tried by a pulse gas supply of DMZn using a catalytic reaction assisted chemical vapor deposition. The deposition time was 1 to 30 minutes, the pulse width and repetition frequency of DMZn was set at constant. Growth thickness per pulse of the ZnO films was estimated from the film thickness and total pulse number during the growth. As a result of the experiment, the growth thickness of the ZnO films increased proportional to the deposition time and the growth rate per pulse was evaluated 0.2 nm, approximately the same value of 1 monolayer thickness of c-ZnO (0.26nm).