[16p-P8-1~23] 21.1 Joint Session K

△ [16p-P8-23] Effects of Sputtering and Annealing Conditions on Thermoelectric Properties of a-InGaZnO

〇Daiki Senaha¹, Mutsunori Uenuma¹, Yuki Tawa¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹, Hideaki Adachi¹ (1.NAIST)

Keywords:IGZO, Thermoelectric, Annealing

Recently, thermoelectric (TE) generator is attracting attention to apply flexible and wearable devices. Amorphous InGaZnO (a-IGZO) can be used as novel generator or sensor as well as flexible and transparent devices. Therefore, improving TE properties of a-IGZO is necessary. In this study, effects of RF power and annealing temperature on TE properties of a-IGZO thin film are reported.