[17a-211-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [17a-211-2] Formation of nanocrystalline silicon thin-films through magnesiothermic reduction of quartz-substrates

〇Muhammad Monirul Islam¹, Takeaki Sakurai¹, Katsuhiro Akimoto¹ (1.Tsukuba Univ.)

Keywords:Magnesiothermic reduction, nanocrystalline silicon, SiO2

We have applied a simple methof for the formation of nanocrystalline silicon (nc-Si) thin-films through magnesiothermic reduction of quartz (SiO₂)-substrates, which involves sputtering of magnesium thin-films on the quartz-substrates, and subsequent annealing at high temperature of 700^OC. An asymmetric Raman-peak at ~507 cm^-1 was seen for the reduced Si-film on the quartz-substrate. Fitting of the Raman spectra hows Gaussian-deconvolution of the two peaks centered around ~ 480 cm^-1, and 506 cm^-1, respectively. Peak at 506 cm^-1 roughly suggests formation of nc-Si with evolution of small amorphous phase at 480cm^-1. Optical and structural properties were discussed for the nc-Si thin films.