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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 17, 2017 9:00 AM - 12:15 PM 301 (301)

Mitsuru Sometani(AIST)

11:15 AM - 11:30 AM

[17a-301-9] Improvement of I-V characteristics by annealing of the oxide films on SiC (000-1) thermally grown in H₂O ambient

〇(M1)Nozomu Iitsuka¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

Keywords:SiC, insulator