[17a-303-1~16] 12.5 有機太陽電池

▲ [17a-303-5] Accessing the Quantum Confinement Energy Levels in High Performance PbTe Colloidal Quantum Dot Transistors

〇Bisri Satria Zulkarnaen¹、Shin Daiki²、Ibanez Maria^3,4、Kovalenko Maksym^3,4、Iwasa Yoshihiro^1,2 (1.RIKEN-CEMS、2.Univ. Tokyo、3.ETH Zurich、4.EMPA)

キーワード：colloidal quantum dots, quantum confinement, charge transport investigation

Colloidal quantum dots (CQD) assemblies emerge as a new type of hybrid solid thin films that exploit the size-dependent quantum confinement properties of the individual QDs: energy bandgap variations and formation of discrete energy sub-bands. Among lead chalcogenide (PbX) CQDs, lead telluride (PbTe) is the least explored, while it is prospective as materials of choice for highly-efficient size-tunable-range mid-infrared emitters and photodetectors, as well as high performance thermoelectrics. Here we demonstrate high performance FETs of PbTe colloidal QD assemblies that combines high carrier mobility and preservation of quantum confinement effect. Ambipolar FETs with high carrier mobility are demonstrated with holes and electrons mobility can reach values in the order of >1 cm²/V.s and >10 cm²/V.s, respectively. In addition, the usage of electric double layer transistors enable us to access the higher discrete energy subbands of the quantum dots. . These results are vital for the utilization of PbTe CQD assemblies for thermoelectrics, interband photodetectors, and photovoltaic with multiple exciton generation capability, where preservation and identification of quantum confinement is important.