2017年第64回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.1 新物質・新機能創成(作製・評価技術)

[17a-501-1~12] 10.1 新物質・新機能創成(作製・評価技術)

10.1と10.2と10.3と10.4のコードシェアセッションあり

2017年3月17日(金) 09:00 〜 12:15 501 (501)

柳原 英人(筑波大)、三浦 良雄(京都工繊大)

09:30 〜 09:45

[17a-501-3] Effects of nitride and fluoride introduction on perpendicular anisotropy at CoFeB/Oxides interfaces

〇(M2C)李 為東1、喜多 浩之1 (1.東大院工)

キーワード:PMA, CoFeB, Fluoride

In this study we introduce dielectric materials consisting of anions with different electronegativity: fluoride and nitride to the CoFeB/oxide interface, to investigate the possibility of manipulation of interface anisotropy energy Kint. As the result, the insertion of both 0.5-nm-thick MgF2 for the CoFeB/MgO stack and 0.5-nm-thick AlF3 for the Al2O3/MgO stack bring around 50% increase of Kint in our experimental conditions, while the insertion of AlN at CoFeB/ Al2O3 decrease the Kint. Thus we can surmise that higher electronegativity anion introduction at the CoFeB/Oxides interface is beneficial for the enhancement of Kint, even though the maximum value of Kint achieved in this study was not so high as the reported value for MgO/CoFeB.