[17a-501-1~12] 10.1 Emerging materials in spintronics and magnetics (including fabrication and charactrization methodologies)

▲ [17a-501-3] Effects of nitride and fluoride introduction on perpendicular anisotropy at CoFeB/Oxides interfaces

〇(M2C)Itou Ri¹, koji kita¹ (1.univ. of tokyo)

Keywords:PMA, CoFeB, Fluoride

In this study we introduce dielectric materials consisting of anions with different electronegativity: fluoride and nitride to the CoFeB/oxide interface, to investigate the possibility of manipulation of interface anisotropy energy K_int. As the result, the insertion of both 0.5-nm-thick MgF₂ for the CoFeB/MgO stack and 0.5-nm-thick AlF₃ for the Al₂O₃/MgO stack bring around 50% increase of K_int in our experimental conditions, while the insertion of AlN at CoFeB/ Al₂O₃ decrease the K_int. Thus we can surmise that higher electronegativity anion introduction at the CoFeB/Oxides interface is beneficial for the enhancement of K_int, even though the maximum value of K_int achieved in this study was not so high as the reported value for MgO/CoFeB.