The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K

[17a-502-1~10] 21.1 Joint Session K

Fri. Mar 17, 2017 9:00 AM - 11:45 AM 502 (502)

Tsutomu Muranaka(Yamanashi Univ.)

11:30 AM - 11:45 AM

[17a-502-10] Development of novel reaction control technology for thin film fabrication using mist flow generating spacial & time gap

Toshiyuki Kawaharamura1, Giang T. Dang1, Li Liu1, Pradeep E.K.C.1, Munetaka Tatsuta1, Mamoru Furuta1, Yuta Suwa1, Shota Sato1, Yoshiaki Nakasone1, Shunsuke Yamaoki1, Misaki Nishi1, Yusuke Kobayashi1, Masahito Sakamoto1, Phimolphan Rutthongjan1 (1.Kochi Univ. of Tech.)

Keywords:multicomponent functional thin films, mist CVD

Functional thin films are very important materials that support our lives, such as coatings for lubrication, passivation, and moisture proofing as well as electronic device applications. The vapor phase growth method and liquid phase growth method have been mainly employed for preparing these function thin films conventionally. In contrast, I have developed “mist CVD”, a functional thin film fabrication technology utilizing mist flow of gas-liquid multiphase in order to accomplish low environmental load, large-area uniformity and high quality simultaneously. I have successfully established mist CVD as a technology comparable to the conventional method by proactively using Leidenfrost state droplets.
There are long-standing problems in thin film fabrication technology such as precise control of growth rates and compositions of multi-component thin films as well as fabrication of uniform and high-quality thin films on curving surface. However, I found the potential for solving these problems by mist CVD, as the physics and principles of the precursor flow behaviors as well as the reaction mechanism became clearer. Mist is droplets floating in the gas. The movement of atoms is restricted at the liquid-gas phase interface and it can be thought that atoms in a droplet hardly impose any influence on other atoms in another droplet. It is possible to avoid complex reactions thanks to spacial and time gaps between mist droplets. Based on this mechanism, we have briefly demonstrated that control of deposition rate and composition ratio of multi-component thin films is possible with mist CVD.