[17a-502-1~10] 21.1 Joint Session K

[17a-502-7] Electronic structure and carrier doping of Sn₂Nb₂O₇

〇Yoshihiro Aiura¹, Kenichi Ozawa², Izumi Hase¹, Kyoko Bando¹, Hiroto Haga^1,3, Hirofumi Kawanaka¹, Akane Samizo^1,4, Naoto Kikuchi¹ (1.AIST, 2.Tokyo Tech, 3.Ibaraki Univ., 4.Tokyo Univ. of Sci.)

Keywords:wide gap p-type semicondoucting oxide

Recently, we successfully demonstrated n-type and p-type semiconductors of ternary tin oxide with pyrochlore structure, Sn₂Nb₂O₇. In this presentation, we will discuss the microscopic electronic structure and carrier doping mechanism of this system.