[17a-503-1~13] 15.4 III-V-group nitride crystals

[17a-503-12] Fabrication of freestanding GaN substrate using inverted-mesa-etched GaN template

〇Norihiro Itagaki¹, Kohei Nojima¹, Naoto Ishibashi¹, Ryo Inomoto¹, Narihito Okada¹, Tomoyasu Nishimiya², Humiharu Matuo², Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.SAMCO Inc.)

Keywords:GaN, mesa, HVPE