The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17a-503-1~13] 15.4 III-V-group nitride crystals

Fri. Mar 17, 2017 9:00 AM - 12:30 PM 503 (503)

Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)

9:15 AM - 9:30 AM

[17a-503-2] Preparation of AlGaN/GaN HEMT structures on amorphous substrates with graphene buffer layers

Kosuke Watahiki1, Hiroshi Kobayashi1, 〇Jitsuo Ohta1,2, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1,3 (1.IIS,Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:HEMT, graphene, amorphous substrates